Heterogeneous 2.5D integration on through silicon interposer

Zhang, Xiaowu; Lin, Jong Kai; Wickramanayaka, Sunil; Zhang, Songbai; Weerasekera, Roshan; Dutta, Rahul; Chang, Ka Fai; Chui, King Jien; Li, Hong Yu; Wee Ho, David Soon; Ding, Liang; Katti, Guruprasad; Bhattacharya, Suryanarayana; Kwong, Dim Lee

Abstract

© 2015 AIP Publishing LLC. Driven by the need to reduce the power consumption of mobile devices, and servers/data centers, and yet continue to deliver improved performance and experience by the end consumer of digital data, the semiconductor industry is looking for new technologies for manufacturing integrated circuits (ICs). In this quest, power consumed in transferring data over copper interconnects is a sizeable portion that needs to be addressed now and continuing over the next few decades. 2.5D Through-Si-Interposer (TSI) is a strong candidate to deliver improved performance while consuming lower power than in previous generations of servers/data centers and mobile devices. These low-power/high-performance advantages are realized through achievement of high interconnect densities on the TSI (higher than ever seen on Printed Circuit Boards (PCBs) or organic substrates), and enabling heterogeneous integration on the TSI platform where individual ICs are assembled at close proximity (

• Journal Article Type: Review
• Acceptance Date: Mar 15, 2015
• Online Publication Date: Jun 1, 2015
• Publication Date: Jun 1, 2015
• Deposit Date: Feb 2, 2017
• Publicly Available Date: Feb 2, 2017
• Journal: Applied Physics Reviews
• Electronic ISSN: 1931-9401
• Publisher: AIP Publishing
• Peer Reviewed: Peer Reviewed
• Volume: 2
• Issue: 2
• Pages: 021308
• DOI: https://doi.org/10.1063/1.4921463
• Keywords: heterogeneous, 2.5D, integration, silicon, interposer
• Public URL: https://uwe-repository.worktribe.com/output/832536
• Publisher URL: http://dx.doi.org/10.1063/1.4921463
• Contract Date: Feb 2, 2017