Thermoelectric properties of single-phase n-type Bi14Te13S8

Fortulan, Raphael; Aminorroaya Yamini, Sima; Juri, Azib; Serhiienko, Illia; Mori, Takao

Abstract

Bismuth telluride (Bi2Te3) and its alloys are among the best thermoelectric materials at room temperature. Bi14Te13S8, a material with a similar crystal structure, contains sulfur that can potentially improve the thermoelectric performance through widening the band gap and reducing the lattice thermal conductivity. This compound forms in sulfur-added Bi2Te3 alloys. Here, a polycrystalline iodine-doped Bi14Te13S8 sample is investigated; an optimum iodine concentration of 1 at. % resulted in the power factor of 3.5 mW2·m–1·K–1 at room temperature. Iodine doping reduced the lattice thermal conductivity by more than 30% by enhancing the phonon scattering. An improved thermoelectric figure of merit zT of ∼0.29 at 520 K was obtained for 1–1.5 at. % iodine-doped Bi14Te13S8. First-principles calculations indicate that Bi14Te13S8 has a larger band gap compared to bismuth telluride, which allows for a reduction in the bipolar effect; however, a lower effective mass reduced the thermopower for a similar carrier concentration. This study demonstrates that tuned iodine doping can effectively optimize the thermoelectric performance of Bi14Te13S8, highlighting its contribution in multiphase sulfur-alloyed Bi2Te3-based materials.

• Journal Article Type: Article
• Acceptance Date: Jan 31, 2024
• Online Publication Date: Feb 14, 2024
• Publication Date: Feb 27, 2024
• Deposit Date: Oct 1, 2024
• Publicly Available Date: Feb 15, 2025
• Journal: ACS Applied Electronic Materials
• Print ISSN: 2637-6113
• Electronic ISSN: 2637-6113
• Publisher: American Chemical Society
• Peer Reviewed: Peer Reviewed
• Volume: 6
• Issue: 2
• Pages: 1283-1291
• DOI: https://doi.org/10.1021/acsaelm.3c01615
• Public URL: https://uwe-repository.worktribe.com/output/13235091