Thickness determination of thin and ultra-thin SiO 2 films by C-AFM IV-spectroscopy
(2006)
Journal Article
Conductive atomic force microscopy was used to determine the electrical oxide thickness for five different silicon dioxide layers with thickness in the order of 1.6-5.04 nm. The electrical thickness results were compared with values determined by ell... Read More about Thickness determination of thin and ultra-thin SiO 2 films by C-AFM IV-spectroscopy.