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Valley-polarized tunneling currents in bilayer graphene tunneling transistors

Thompson, J. J. P.; Leech, D. J.; Mucha-Kruczy?ski, M.


J. J. P. Thompson

D. J. Leech

M. Mucha-Kruczy?ski


We study theoretically the electron current across a monolayer graphene/hexagonal boron nitride/bilayer graphene tunneling junction in an external magnetic field perpendicular to the layers. We show that change in effective tunneling barrier width for electrons on different graphene layers of bilayer graphene, coupled with the fact that its Landau level wave functions are not equally distributed amongst the layers with a distribution that is reversed between the two valleys, lead to valley polarization of the tunneling current. We estimate that valley polarization ?70% can be achieved in high quality devices at B=1 T. Moreover, we demonstrate that strong valley polarization can be obtained both in the limit of strong-momentum-conserving tunneling and in lower quality devices where this constraint is lifted.


Thompson, J. J. P., Leech, D. J., & Mucha-Kruczy?ski, M. (2019). Valley-polarized tunneling currents in bilayer graphene tunneling transistors. Physical Review B, 99(8), Article 085420.

Journal Article Type Article
Acceptance Date Jan 20, 2019
Publication Date Feb 15, 2019
Deposit Date Mar 5, 2019
Publicly Available Date Mar 5, 2019
Journal Physical Review B
Print ISSN 2469-9950
Electronic ISSN 2469-9969
Publisher American Physical Society
Peer Reviewed Peer Reviewed
Volume 99
Issue 8
Article Number 085420
Keywords graphene, transistors, physics, nanoscience, Van der Waals heterostuctures, 2D materials, tunnel junctions, valley
Public URL
Publisher URL
Additional Information Additional Information : (c) American Physical Society.


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