Valley-polarized tunneling currents in bilayer graphene tunneling transistors
(2019)
Journal Article
We study theoretically the electron current across a monolayer graphene/hexagonal boron nitride/bilayer graphene tunneling junction in an external magnetic field perpendicular to the layers. We show that change in effective tunneling barrier width fo... Read More about Valley-polarized tunneling currents in bilayer graphene tunneling transistors.