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The effect of changing electrode metal on solution-processed flexible titanium dioxide memristors

Gale, Ella; Pearson, David; Kitson, Steve; Adamatzky, Andrew; De Lacy Costello, Ben

Authors

Ella Gale ella.gale@uwe.ac.uk

David Pearson

Steve Kitson



Abstract

Flexible solution-processed memristors show different behaviour dependent on the choice of electrode material. Use of gold for both electrodes leads to switchable WORM (Write Once Read Many times) resistive devices. Use of aluminium for both electrodes allows both curved (wholly non-linear) and triangular (linear ohmic low resistance state) memristive switching resistance memories. A comparison device with an aluminium bottom electrode and gold top electrode only exhibited significant memristive resistance switching when the aluminium electrode was the anode, suggesting that the electrode is acting as a source/sink of oxygen anions. Using the gold electrode as the anode causes oxygen evolution and electrode deformation. We conclude aluminium is helpful for stabilising and promoting memristive behaviour in solegel TiO2 devices. On and Off resistance states were found to correlate to device size, and the relative proportions of curved to triangular switching devices could be affected by vacuum curing of the gel layer and compliance current. We postulate that: A. the curved memristor switching is a bulk action compliant with Chua's description of a memristor; B. the triangular switching involves a filament conduction for the ohmic low resistance state.

Journal Article Type Article
Publication Date Jan 1, 2015
Journal Materials Chemistry and Physics
Print ISSN 0254-0584
Publisher Elsevier
Peer Reviewed Peer Reviewed
Volume 162
Pages 20-30
APA6 Citation Gale, E., Pearson, D., Kitson, S., Adamatzky, A., & de Lacy Costello, B. (2015). The effect of changing electrode metal on solution-processed flexible titanium dioxide memristors. Materials Chemistry and Physics, 162, 20-30. https://doi.org/10.1016/j.matchemphys.2015.03.037
DOI https://doi.org/10.1016/j.matchemphys.2015.03.037
Keywords amorphous materials, semiconductors, electrical properties, electrical conductivity, electrical characterisation, electrical properties
Publisher URL http://dx.doi.org/10.1016/j.matchemphys.2015.03.037