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An Analytical Capacitance Model for Through-Silicon Vias in Floating Silicon Substrate (2016)
Journal Article
Weerasekera, R., Katti, G., Dutta, R., Zhang, S., Chang, K. F., Zhou, J., & Bhattacharya, S. (2016). An Analytical Capacitance Model for Through-Silicon Vias in Floating Silicon Substrate. IEEE Transactions on Electron Devices, 63(3), 1182-1188. https://doi.org/10.1109/TED.2016.2522501

© 2016 IEEE. Through-silicon via (TSV) is an integral part of 2.5-D IC technology leveraged for multichip heterogeneous integration to achieve shorter interconnects, faster speed, and lower power consumption in the state-of-the-art circuit systems. T... Read More about An Analytical Capacitance Model for Through-Silicon Vias in Floating Silicon Substrate.