Skip to main content

Research Repository

Advanced Search

All Outputs (1)

Simplified tunnelling current calculation for MOS structures with ultra-thin oxides for conductive atomic force microscopy investigations (2005)
Journal Article
Frammelsberger, W., Benstetter, G., Stamp, R., Kiely, J., & Schweinboeck, T. (2005). Simplified tunnelling current calculation for MOS structures with ultra-thin oxides for conductive atomic force microscopy investigations. Materials Science and Engineering: B, 116(2), 168-174. https://doi.org/10.1016/j.mseb.2004.09.027

As charge tunnelling through thin and ultra-thin silicon dioxide layers is regarded as the driving force for MOS device degradation the determination and characterisation of electrically week spots is of paramount importance for device reliability an... Read More about Simplified tunnelling current calculation for MOS structures with ultra-thin oxides for conductive atomic force microscopy investigations.