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Facile and inexpensive fabrication of zinc oxide based bio-surfaces for C-reactive protein detection (2018)
Journal Article
Lu, C., Janice, K., Martina, P., & Richard, L. (2018). Facile and inexpensive fabrication of zinc oxide based bio-surfaces for C-reactive protein detection. Scientific Reports, 8(1), 122687. https://doi.org/10.1038/s41598-018-30793-z

© 2018, The Author(s). The paper reports a biosensor formed from antibody coated ZnO nano-crystals which has been prepared using a rapid and inexpensive fabrication method which utilises colloidal dispersion enhanced using sonication. This technique... Read More about Facile and inexpensive fabrication of zinc oxide based bio-surfaces for C-reactive protein detection.

Thickness determination of thin and ultra-thin SiO 2 films by C-AFM IV-spectroscopy (2006)
Journal Article
Frammelsberger, W., Benstetter, G., Kiely, J., & Stamp, R. (2006). Thickness determination of thin and ultra-thin SiO 2 films by C-AFM IV-spectroscopy. Applied Surface Science, 252(6), 2375-2388. https://doi.org/10.1016/j.apsusc.2005.04.010

Conductive atomic force microscopy was used to determine the electrical oxide thickness for five different silicon dioxide layers with thickness in the order of 1.6-5.04 nm. The electrical thickness results were compared with values determined by ell... Read More about Thickness determination of thin and ultra-thin SiO 2 films by C-AFM IV-spectroscopy.

Simplified tunnelling current calculation for MOS structures with ultra-thin oxides for conductive atomic force microscopy investigations (2005)
Journal Article
Frammelsberger, W., Benstetter, G., Stamp, R., Kiely, J., & Schweinboeck, T. (2005). Simplified tunnelling current calculation for MOS structures with ultra-thin oxides for conductive atomic force microscopy investigations. Materials Science and Engineering: B, 116(2), 168-174. https://doi.org/10.1016/j.mseb.2004.09.027

As charge tunnelling through thin and ultra-thin silicon dioxide layers is regarded as the driving force for MOS device degradation the determination and characterisation of electrically week spots is of paramount importance for device reliability an... Read More about Simplified tunnelling current calculation for MOS structures with ultra-thin oxides for conductive atomic force microscopy investigations.